? 2013 ixys corporation, all rights reserved power mosfets ds98849e(01/13) IXTT10P60 ixth10p60 p-channel enhancement mode avalanche rated v dss = - 600v i d25 = - 10a r ds(on) 1 symbol test conditions maximum ratings v dss t j = 25 c to 150 c - 600 v v dgr t j = 25 c to 150 c, r gs = 1m - 600 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c - 10 a i dm t c = 25 c, pulse width limited by t jm - 40 a i a t c = 25 c - 10 a e as t c = 25 c3j p d t c = 25 c 300 w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-247) 1.13 / 10 nm/lb.in. weight to-268 4 g to-247 6 g g = gate d = drain s = source tab = drain to-247 (ixth) g s d (tab) d to-268 (ixtt) s g d (tab) symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = - 250 a - 600 v v gs(th) v ds = v gs , i d = - 250 a - 3.0 - 5.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = 0.8 ? v dss , v gs = 0v - 25 a t j = 125 c -1 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 1 features z international standard packages z low r ds (on) hdmos tm process z rugged polysilicon gate cell structure z avalanche rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density applications z high-side switching z push pull amplifiers z dc choppers z automatic test equipment
ixys reserves the right to change limits, test conditions, and dimensions. IXTT10P60 ixth10p60 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 e ? p to-247 outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-268 outline terminals: 1 - gate 2 - drain 3 - source 4 - drain symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = -10v, i d = 0.5 ? i d25 , note 1 5 10.5 s c iss 4665 pf c oss v gs = 0v, v ds = - 25v, f = 1mhz 437 pf c rss 157 pf t d(on) 33 ns t r 27 ns t d(off) 85 ns t f 35 ns q g(on) 135 nc q gs v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 30 nc q gd 45 nc r thjc 0.42 c/w r thcs to-247 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v - 10 a i sm repetitive, pulse width limited by t jm - 40 a v sd i f = i s , v gs = 0v, note 1 - 3.0 v t rr 500 ns note 1: pulse test, t 300 s, duty cycle, d 2%. resistive switching times v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 4.7 (external) i f = -10a, -di/dt = -100a/ s v r = -100v, v gs = 0v
? 2013 ixys corporation, all rights reserved IXTT10P60 ixth10p60 fig. 1. output characteristics @ t j = 25oc -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 -8 -7 -6 -5 -4 -3 -2 -1 0 v ds - volts i d - amperes v gs = -10v - 7v - 6v - 5 v - 5.5 v fig. 2. extended output characteristics @ t j = 25oc -32 -28 -24 -20 -16 -12 -8 -4 0 -30 -25 -20 -15 -10 -5 0 v ds - volts i d - amperes v gs = -10v - 8v - 7v - 5 v - 6 v - 5.5 v fig. 3. output characteristics @ t j = 125oc -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 -15 -13 -11 -9 -7 -5 -3 -1 v ds - volts i d - amperes v gs = -10v - 7v - 6v - 4v - 5v fig. 4. r ds(on) normalized to i d = - 5a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = -10v i d = -10a i d = - 5a fig. 5. r ds(on) normalized to i d = - 5a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -30 -25 -20 -15 -10 -5 0 i d - amperes r ds(on) - normalized v gs = -10v t j = 25oc t j = 125oc fig. 6. maximum drain current vs. case temperature -12 -10 -8 -6 -4 -2 0 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTT10P60 ixth10p60 fig. 7. input admittance -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 -6.2 -5.8 -5.4 -5.0 -4.6 -4.2 -3.8 -3.4 -3.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 4 8 12 16 20 24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode -30 -25 -20 -15 -10 -5 0 -2.5 -2 -1.5 -1 -0.5 0 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 20 40 60 80 100 120 140 q g - nanocoulombs v gs - volts v ds = - 300v i d = - 5a i g = -1ma fig. 11. capacitance 100 1,000 10,000 -40 -35 -30 -25 -20 -15 -10 -5 0 v ds - volts capacitance - picofarads f = 1 mh z c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2013 ixys corporation, all rights reserved ixys ref: t_10p60(7x-l69)9-17-12 IXTT10P60 ixth10p60 fig. 13. forward-bias safe operating area @ t c = 25oc 0.1 1 10 100 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 1ms 100s r ds(on) limit 10ms dc - - - --- - 100ms fig. 14. forward-bias safe operating area @ t c = 75oc 0.1 1 10 100 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 75oc single pulse 1ms 100s r ds(on) limit 10ms dc - - - - - - - 100ms
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